Double-dot charge transport in Si single-electronÕhole transistors
نویسندگان
چکیده
We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4,T,100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T,4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot. © 2000 American Institute of Physics. @S0003-6951~00!03412-4#
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